The new device can operate 2.5 times faster than the fastest energy relies on analogues and up to 25 times faster than slower.
Scientists from the University of Fudan in China have set a new world record for semiconductor drive by developing a flash memory device that can save data at a speed of a bit for 400 picoseconds, Shanghaieye reports.
The new device, called POX, is a type of energy memory, which significantly exceeds even the fastest modern energy -dependent technology, such as SRAM and DRAM, which requires from 1 to 10 nanoseconds to record a bit. For comparison, a picosecond is a thousand nanoseconds or a trillion part of a second, that is, a new device can be 2.5 times the fastest energy dependent on analogues and up to 25 times faster than slower.
https://www.youtube.com/watch?v=SFZJS3EHGGW
As the leading researcher Zhou Pen noted, in this project, artificial intelligence algorithms are actively used, which has helped to optimize test conditions and significantly accelerate technology development.
Currently, the Fudan team is looking for ways to make this device a commercial product.
The results of the study were published on Wednesday in Nature Magazine.
We remind you, earlier reported that in China they showed an alternative for HDMI and DisplayPort.
They will sell a humanoid robot in China
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Source: korrespondent
I am Ben Stock, a passionate and experienced digital journalist working in the news industry. At the Buna Times, I write articles covering technology developments and related topics. I strive to provide reliable information that my readers can trust. My research skills are top-notch, as well as my ability to craft engaging stories on timely topics with clarity and accuracy.